p-channel power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3098 issue 2 page 1 of 3 IRFF9130 / 2n6849 mosfet transistor in a hermetic metal to-205af packag e single pulse avalanche energy rated designed for switching, power supply, motor control and amplifier applications screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v ds drain ? source voltage -100v v dg drain ? gate voltage r gs = 20k -100v v gs gate ? source voltage 20v i d continuous drain current t c = 25c -6.5a i d continuous drain current t c = 100c -4.1a i dm pulsed drain current (1) -25a p d total power dissipation at t c = 25c 25w derate above 25c 0.2w/c e as single pulse avalanche energy (2)(4) 500mj t j junction temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters max. units r jc thermal resistance, junction to case 5 c/w r ja thermal resistance, junction to ambient 175 c/w internal package inductance symbols parameters typ. units l s + l d total inductance 7 nh notes notes notes notes (1) repetitive rating: pulse width limited by maximum j unction temperature (2) @v dd = -25v, starting t j = 25c, l = 17.25mh, peak i l = -6.5a, v gs = -10v (3) pulse width 300us, 2% (4) by design only, not a production test. gy-d?2v"?63aae?8fv?a?]th??[e?pn???r? gy-d?2v"?63aae?8fv?a?]th??[e?pn???r?
p-ch annel power moset IRFF9130 / 2n6849 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3098 issue 2 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units bv dss drain-source breakdown voltage v gs = 0 i d = -1.0ma -100 v j t vdss b d d temperature coefficent of breakdown voltage reference to 25c i d = -1.0ma -0.1 v/c v gs = -10v i d = -4.1a (3) 0.3 t j = 125c 0.54 r ds(on) static drain-source on-state resistance v gs = -10v i d = -6.5a (3) 0.32 v ds = v gs i d = -250 a -2 -4 t j = 125c -1.0 v gs(th) gate threshold voltage t j = -55c -5 v g fs forward transconductance v ds -5v i ds = -4.1a (3) 2.5 3.5 7.5 s( ? ) v gs = 0 v ds = 0.8bv dss 25 i dss zero gate voltage drain current t j = 125c 250 a v gs = 20v 100 i gss forward gate-source leakage t j = 125c 200 v gs = -20v -100 i gss reverse gate-source leakage t j = 125c -200 na dynamic characteristics c iss input capacitance v gs = 0 800 c oss output capacitance v ds = -25v 350 c rss reverse transfer capacitance f = 1.0mhz 125 pf q g (4) total gate charge v gs = -10v 34.8 q gs (4) gate-source charge i d = -6.5a 6.8 q gd (4) gate-drain charge v ds = 0.5bv dss 23.1 nc t d(on) turn-on delay time 60 t r rise time 140 t d(off) turn-off delay time 140 t f fall time v dd = -40v i d = -4.1a r g = 7.5 140 ns source-drain diode characteristics i s continuous source current -6.5 i sm pulse source current (1) -25 a i s = -6.5a t j = 25c v sd diode forward voltage v gs = 0 (4) -4.3 v t rr reverse recovery time i s = -6.5a t j = 25c 250 ns q rr reverse recovery charge v dd -50v di/dt = 100a/ s (3) 3 c
p-ch annel power moset IRFF9130 / 2n6849 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3098 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) to - 39 (to - 205af ) pin 1 - source pin 2 - gate pin 3 - drain 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3
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